Свойства эпитаксиальных слоев GaAs, легированных редкоземельными элементами

• Date: 2007
• Main Authors: Krukovsky, S. I., Suvorotka, N. Ya.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2007
• Subjects: эпитаксиальные слои; редкоземельные элементы; точка инверсии
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.2.47
• Journal Title: Technology and design in electronic equipment

An analysis has been carried out of the properties of epitaxial GaAs layers obtained from gallium melts doped with rare‑earth elements (REEs). It has been established that each REE corresponds to a certain critical concentration in the melt, above which an inversion of the conductivity type of the e...