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Воздействие импульсов прямого тока на время жизни неосновных носителей заряда в р+–n-диоде

A method is proposed for controlled modification of the lifetime of minority charge carriers in the base of a semiconductor diode crystal under the action of a short modifying current pulse, which leads to sharp non‑uniform heating of the crystal. Studies have been carried out on changes in the char...

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Bibliographic Details
Date:2007
Main Authors: Kushnirenko, V. V., Ninidze, G. K., Pavljuk, S. P., Savitsky, S. M., Tretyak, O. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2007
Subjects:
час життя неосновних носіїв
центри рекомбінації
напівпровідниковий діод
імпульсне нагрівання струмом
p –n-перехід
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.32
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:A method is proposed for controlled modification of the lifetime of minority charge carriers in the base of a semiconductor diode crystal under the action of a short modifying current pulse, which leads to sharp non‑uniform heating of the crystal. Studies have been carried out on changes in the characteristics of industrial diode crystals KD105–KD209. The energy parameters of newly introduced recombination centers have been determined.

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