Ростовое оборудование для производства полуизолирующего GaAs методом Чохральского
A brief description and comparison of the liquid-encapsulated Czochralski (LEC) method with other growth techniques is presented, as well as its role in the development of semi-insulating GaAs technology. Information is provided on modern developments in growth equipment for producing large-diameter...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.03 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | A brief description and comparison of the liquid-encapsulated Czochralski (LEC) method with other growth techniques is presented, as well as its role in the development of semi-insulating GaAs technology. Information is provided on modern developments in growth equipment for producing large-diameter SI-GaAs crystals by the LEC method. Comparative characteristics of pulling installations of the new and previous generations are given. The tendencies in the development of growth equipment, along with the current state of domestic mechanical engineering and industrial production of gallium arsenide, are described. |
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