Механизм управления фоточувствительностью полевого фототранзистора
It has been experimentally shown that in a field phototransistor with a channel doped with tin, the region of high dynamic resistance is extended, in contrast to a transistor doped with tellurium. This difference is related to the specific mechanisms of channel cutoff in each case. The mechanisms of...
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| Datum: | 2006 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.43 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | It has been experimentally shown that in a field phototransistor with a channel doped with tin, the region of high dynamic resistance is extended, in contrast to a transistor doped with tellurium. This difference is related to the specific mechanisms of channel cutoff in each case. The mechanisms of photosensitivity have been clarified, and a direct dependence of internal photocurrent amplification on the steepness of the transfer characteristic and the output dynamic resistance has been established. The results can be applied in the design of optoelectronic circuits based on field phototransistors |
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