Механизм управления фоточувствительностью полевого фототранзистора

• Date: 2006
• Main Author: Yodgorova, D. М.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: полевой фототранзистор; фоточувствительность; динамическое сопротивление; легированный оловом; р–n-переход
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.43
• Journal Title: Technology and design in electronic equipment

It has been experimentally shown that in a field phototransistor with a channel doped with tin, the region of high dynamic resistance is extended, in contrast to a transistor doped with tellurium. This difference is related to the specific mechanisms of channel cutoff in each case. The mechanisms of...