Технология изготовления GaAs-диодов Ганна для диапазона коротких миллимитровых длин волн
An AuGe–TiB2–Au contact to gallium arsenide has been developed, possessing the property of injecting hot electrons. The barrier height is 0.25 eV for GaAs with a carrier concentration of (0.3–1)·1016 cm–3. A diode package with a capacitance of 0.04 pF has been designed. The fabricated Gunn diodes pr...
Збережено в:
| Дата: | 2006 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.05 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | An AuGe–TiB2–Au contact to gallium arsenide has been developed, possessing the property of injecting hot electrons. The barrier height is 0.25 eV for GaAs with a carrier concentration of (0.3–1)·1016 cm–3. A diode package with a capacitance of 0.04 pF has been designed. The fabricated Gunn diodes provide an output microwave power of about 40 mW at the fundamental oscillation frequency of 80 GHz, with an efficiency of 4%. The diodes operate stably in the temperature range from –50°C to +60°C and begin stable generation from –70°C. |
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