Технология изготовления GaAs-диодов Ганна для диапазона коротких миллимитровых длин волн
An AuGe–TiB2–Au contact to gallium arsenide has been developed, possessing the property of injecting hot electrons. The barrier height is 0.25 eV for GaAs with a carrier concentration of (0.3–1)·1016 cm–3. A diode package with a capacitance of 0.04 pF has been designed. The fabricated Gunn diodes pr...
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| Datum: | 2006 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.05 |
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| Назва журналу: | Technology and design in electronic equipment |