Технология изготовления GaAs-диодов Ганна для диапазона коротких миллимитровых длин волн

• Date: 2006
• Main Authors: Ivanov, V. N., Kovtonyuk, V. M., Nikolaienko, Yu. E.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: диод Ганна; мезаструктура; диборид титана; горячие электроны
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.05
• Journal Title: Technology and design in electronic equipment

An AuGe–TiB2–Au contact to gallium arsenide has been developed, possessing the property of injecting hot electrons. The barrier height is 0.25 eV for GaAs with a carrier concentration of (0.3–1)·1016 cm–3. A diode package with a capacitance of 0.04 pF has been designed. The fabricated Gunn diodes pr...