Полупроводниковые индуктивности для СВЧ-диапазона
Schemes of combined semiconductor inductors suitable for implementation as hybrid or semiconductor microcircuits have been developed. The use of dual-gate Schottky transistors makes it possible to realize semiconductor inductors with values of several nanohenries at frequencies of 18–20 GHz, with a...
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| Datum: | 2006 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.09 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Schemes of combined semiconductor inductors suitable for implementation as hybrid or semiconductor microcircuits have been developed. The use of dual-gate Schottky transistors makes it possible to realize semiconductor inductors with values of several nanohenries at frequencies of 18–20 GHz, with a temperature instability coefficient of 0.07 %·°C–1 in the temperature range of 0–40 °C. Unlike thin-film inductors, they exhibit higher inductance and quality factor, which are independent of geometric dimensions. |
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