Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах
The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of e...
Збережено в:
| Дата: | 2006 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of electron resist separated by a thin metal layer. Experimental transistor samples with T-shaped gates have been fabricated, featuring a gate height of 1.1 μm, a bottom part length of 0.15 μm, and a top part length of 0.8–1.0 μm. |
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