Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах
The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of e...
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| Date: | 2006 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | Ukrainian |
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PE "Politekhperiodika", Book and Journal Publishers
2006
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| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| _version_ | 1861499672980357120 |
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| author | Bosiy, V. I. Korzhinskiy, F. I. Semashko, E. M. Sereda, I. V. Sereda, L. D. Tkachenko, V. V. |
| author_facet | Bosiy, V. I. Korzhinskiy, F. I. Semashko, E. M. Sereda, I. V. Sereda, L. D. Tkachenko, V. V. |
| author_sort | Bosiy, V. I. |
| baseUrl_str | https://www.tkea.com.ua/index.php/journal/oai |
| collection | OJS |
| datestamp_date | 2026-04-03T20:25:38Z |
| description | The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of electron resist separated by a thin metal layer. Experimental transistor samples with T-shaped gates have been fabricated, featuring a gate height of 1.1 μm, a bottom part length of 0.15 μm, and a top part length of 0.8–1.0 μm. |
| first_indexed | 2026-04-04T01:00:28Z |
| format | Article |
| id | oai:tkea.com.ua:article-918 |
| institution | Technology and design in electronic equipment |
| keywords_txt_mv | keywords |
| language | Ukrainian |
| last_indexed | 2026-04-04T01:00:28Z |
| publishDate | 2006 |
| publisher | PE "Politekhperiodika", Book and Journal Publishers |
| record_format | ojs |
| spelling | oai:tkea.com.ua:article-9182026-04-03T20:25:38Z Formation of T-shaped gates in low-noise microwave field-effect transistor Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах Bosiy, V. I. Korzhinskiy, F. I. Semashko, E. M. Sereda, I. V. Sereda, L. D. Tkachenko, V. V. microwave field-effect transistor electron-beam lithography T-shaped gate полевой СВЧ-транзистор электронно-лучевая литография Т-образный затвор The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of electron resist separated by a thin metal layer. Experimental transistor samples with T-shaped gates have been fabricated, featuring a gate height of 1.1 μm, a bottom part length of 0.15 μm, and a top part length of 0.8–1.0 μm. Исследован процесс формирования Т-образного затвора в малошумящих полевых транзисторах миллиметрового и субмиллиметрового диапазонов длин волн. Предложена технологическая схема формирования Т-образного затвора, основанная на использовании электронно-лучевого экспонирования трехслойной резистивной структуры, состоящей из двух слоев электронного резиста, разделенных тонким слоем металла. Получены экспериментальные образцы транзисторов с Т-образными затворами высотой 1,1 мкм, длиной нижней части 0,15 мкм и верхней части — 0,8–1,0 мкм. PE "Politekhperiodika", Book and Journal Publishers 2006-10-30 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18 Technology and design in electronic equipment; No. 5 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature; 18-20 Технологія та конструювання в електронній апаратурі; № 5 (2006): Технология и конструирование в электронной аппаратуре; 18-20 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18/831 Copyright (c) 2006 Bosiy V. I., Korzhinskiy F. I., Semashko E. M., Sereda I. V., Sereda L. D., Tkachenko V. V. http://creativecommons.org/licenses/by/4.0/ |
| spellingShingle | полевой СВЧ-транзистор электронно-лучевая литография Т-образный затвор Bosiy, V. I. Korzhinskiy, F. I. Semashko, E. M. Sereda, I. V. Sereda, L. D. Tkachenko, V. V. Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title | Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title_alt | Formation of T-shaped gates in low-noise microwave field-effect transistor |
| title_full | Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title_fullStr | Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title_full_unstemmed | Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title_short | Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах |
| title_sort | создание т-образного затвора в малошумящих полевых свч-транзисторах |
| topic | полевой СВЧ-транзистор электронно-лучевая литография Т-образный затвор |
| topic_facet | microwave field-effect transistor electron-beam lithography T-shaped gate полевой СВЧ-транзистор электронно-лучевая литография Т-образный затвор |
| url | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18 |
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