Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах

The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of e...

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Bibliographische Detailangaben
Datum:2006
Hauptverfasser: Bosiy, V. I., Korzhinskiy, F. I., Semashko, E. M., Sereda, I. V., Sereda, L. D., Tkachenko, V. V.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2006
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment

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