Создание Т-образного затвора в малошумящих полевых СВЧ-транзисторах

• Дата: 2006
• Автори: Bosiy, V. I., Korzhinskiy, F. I., Semashko, E. M., Sereda, I. V., Sereda, L. D., Tkachenko, V. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2006
• Теми: полевой СВЧ-транзистор; электронно-лучевая литография; Т-образ­ный затвор
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18
• Назва журналу: Technology and design in electronic equipment

The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of e...