Прогнозирование разброса параметров полевых транзисторов с барьером Шоттки на GaAs
It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a single quantity: the effective concentration of...
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| Datum: | 2006 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.36 |
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| Назва журналу: | Technology and design in electronic equipment |