Кремниевый термостатированный p–i–n-фотодиод
A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range of 20–85 °C.
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| Date: | 2006 |
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| Main Author: | |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.39 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range of 20–85 °C. |
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