Кремниевый термостатированный p–i–n-фотодиод

• Date: 2006
• Main Author: Dobrovolsky, Yu. G.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: фотодиод; кремний; термостатирование; термоэлектрический модуль; темновой ток; ток шума
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.39
• Journal Title: Technology and design in electronic equipment

A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range of 20–85 °C.