Физико-технологические основы получения резкого p–n-перехода

• Date: 2006
• Main Authors: Karimov, A. V., Yodgorova, D. M., Yuldashev, Sh.Sh., Boltaeva, Sh. Sh.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: резкий p–n-переход; жидкостная эпитаксия; промежуточный слой; раствор-расплав; охлаждение
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.59
• Journal Title: Technology and design in electronic equipment

A method for obtaining an abrupt p–n junction by liquid-phase epitaxy is presented. It consists in the growth of a thin intermediate p-type layer on a heavily doped p+ substrate, followed by the growth of an n-type layer from a melt cooled at a decreasing rate.