Взаимодействие атомарного водорода с поверхностью монокристаллов кремния
The effect of atomic hydrogen on silicon single crystals was investigated at 300–310 K, with a chamber pressure of 20 Pa and an atomic hydrogen concentration of about 1019 m–1. Silicon samples of both conductivity types, including n-type Si with (100) and (111) orientations, were treated in an atomi...
Збережено в:
| Дата: | 2006 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2006
|
| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.61 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The effect of atomic hydrogen on silicon single crystals was investigated at 300–310 K, with a chamber pressure of 20 Pa and an atomic hydrogen concentration of about 1019 m–1. Silicon samples of both conductivity types, including n-type Si with (100) and (111) orientations, were treated in an atomic hydrogen environment for 30–720 s. It was shown that exposure to atomic hydrogen leads to changes in the electrophysical parameters of silicon crystals and of metal–semiconductor structures fabricated on their basis. A physical mechanism explaining the observed results is proposed. |
|---|