Взаимодействие атомарного водорода с поверхностью монокристаллов кремния
The effect of atomic hydrogen on silicon single crystals was investigated at 300–310 K, with a chamber pressure of 20 Pa and an atomic hydrogen concentration of about 1019 m–1. Silicon samples of both conductivity types, including n-type Si with (100) and (111) orientations, were treated in an atomi...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.61 |
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| Назва журналу: | Technology and design in electronic equipment |