Исследование примесного фотоэффекта в двухбарьерных p–n–m-структурах
The spectral photosensitivity and current transport mechanisms in two-barrier p(Al0,08Ga0,82)In0,1As-nGaAs:О-Au structures at room temperature have been investigated. It is shown that, depending on the operating mode, both tunnel-injection and generation-injection currents occur. The st...
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| Date: | 2006 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.3.40 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The spectral photosensitivity and current transport mechanisms in two-barrier p(Al0,08Ga0,82)In0,1As-nGaAs:О-Au structures at room temperature have been investigated. It is shown that, depending on the operating mode, both tunnel-injection and generation-injection currents occur. The studied two-sided photosensitive structure, which remains functional under either polarity of the applied voltage, is of interest for the detection and processing of optical signals in the visible (λ = 0.5–0.9 μm, λ = 0.9–1.0 μm) and near-infrared (λ = 1.0–1.4 μm, λ = 1.4–1.6 μm) spectral ranges, which are promising for optoelectronic applications. |
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