Комплексно-легированные эпитаксиальные структуры InP/InGaAsP для оптоэлектроники
The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied. Using a technological approach based on complex doping, InP/InGaAsP epitaxial structures for photodetectors were obtained...
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| Date: | 2026 |
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| Main Author: | |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2026
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.27 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied. Using a technological approach based on complex doping, InP/InGaAsP epitaxial structures for photodetectors were obtained. On the basis of these structures, mesa photodiodes were fabricated with an active area of 0.3·10–2 cm² and dark currents not exceeding 10–9 A at 300 K. |
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