Комплексно-легированные эпитаксиальные структуры InP/InGaAsP для оптоэлектроники
The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied. Using a technological approach based on complex doping, InP/InGaAsP epitaxial structures for photodetectors were obtained...
Збережено в:
| Дата: | 2026 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2026
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.27 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied. Using a technological approach based on complex doping, InP/InGaAsP epitaxial structures for photodetectors were obtained. On the basis of these structures, mesa photodiodes were fabricated with an active area of 0.3·10–2 cm² and dark currents not exceeding 10–9 A at 300 K. |
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