Фотоэлектрические параметры гетеропереходов SnS₂–хSeₓ–InSe (0≤х≤1)
Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x...
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| Date: | 2006 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.41 |
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| Journal Title: | Technology and design in electronic equipment |