Поверхностный монтаж мощных бескорпусных MOSFET-транзисторов

The processes of mounting MOSFET transistor chips onto metallic and ceramic die holders intended for surface mounting have been investigated. The quality of chip attachment was evaluated using optical inspection, non-destructive X-ray television diagnostics, photoacoustic testing, and laser microint...

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Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Anufriev, D. L., Rubtsevich, I. I., Kerentsev, A. F.
Формат: Стаття
Мова:Українська
Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2006
Теми:
Онлайн доступ:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.45
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Назва журналу:Technology and design in electronic equipment

Репозитарії

Technology and design in electronic equipment
Опис
Резюме:The processes of mounting MOSFET transistor chips onto metallic and ceramic die holders intended for surface mounting have been investigated. The quality of chip attachment was evaluated using optical inspection, non-destructive X-ray television diagnostics, photoacoustic testing, and laser microinterferometry. Results on electrical and thermal parameters are presented. It was established that mounting chips on Au–Si eutectic significantly increases the stability of the thermal parameters of high-power transistors under cyclic temperature changes.