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Влияние плазмохимического травления на структуру поверхности кремниевых пластин фотоэлектрических преобразователей

The results of plasma-chemical etching (PCE) of the surface of photovoltaic converter (PVC) wafers, pre-structured by chemical etching, are presented. PCE was carried out in a plasma-chemical reactor using a mixture of sulfur hexafluoride (SF₆) and 10% oxygen. Mass spectrometry demonstrated high eff...

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Bibliographic Details
Date:2006
Main Authors: Polozov, B. P., Fedorovich, O. A., Golotyuk, V. N., Marinenko, A. A., Lukomsky, D. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2006
Subjects:
фотоэлектрические преобразователи
плазмохимическое травление
плазмохимический реактор
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.52
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The results of plasma-chemical etching (PCE) of the surface of photovoltaic converter (PVC) wafers, pre-structured by chemical etching, are presented. PCE was carried out in a plasma-chemical reactor using a mixture of sulfur hexafluoride (SF₆) and 10% oxygen. Mass spectrometry demonstrated high efficiency of working gas utilization in the reactor. Electron microscopy studies revealed varying degrees of surface structure modification depending on etching time. As a result of short-term treatment of the silicon wafer surface, its interaction with light is enhanced — the short-circuit current increases by 5.5%, and the efficiency of the PVC rises from 12% to 13%.

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