Влияние плазмохимического травления на структуру поверхности кремниевых пластин фотоэлектрических преобразователей

• Дата: 2006
• Автори: Polozov, B. P., Fedorovich, O. A., Golotyuk, V. N., Marinenko, A. A., Lukomsky, D. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2006
• Теми: фотоэлектрические преобразователи; плазмохимическое травление; плазмохимический реактор
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.52
• Назва журналу: Technology and design in electronic equipment

The results of plasma-chemical etching (PCE) of the surface of photovoltaic converter (PVC) wafers, pre-structured by chemical etching, are presented. PCE was carried out in a plasma-chemical reactor using a mixture of sulfur hexafluoride (SF₆) and 10% oxygen. Mass spectrometry demonstrated high efficiency of working gas utilization in the reactor. Electron microscopy studies revealed varying degrees of surface structure modification depending on etching time. As a result of short-term treatment of the silicon wafer surface, its interaction with light is enhanced — the short-circuit current increases by 5.5%, and the efficiency of the PVC rises from 12% to 13%.