Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures

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Бібліографічні деталі
Дата:2010
Автори: V. Osinsky, O. Dyachenko
Формат: Стаття
Мова:Англійська
Опубліковано: 2010
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000349234
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Репозитарії

Library portal of National Academy of Sciences of Ukraine | LibNAS
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author V. Osinsky
O. Dyachenko
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O. Dyachenko
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spelling open-sciencenbuvgovua-1000632024-04-17T17:54:58Z Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures V. Osinsky O. Dyachenko 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349234 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
V. Osinsky
O. Dyachenko
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title_full Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title_fullStr Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title_full_unstemmed Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title_short Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
title_sort crystal lattice engineering the novel substrates for iii-nitride-oxide heterostructures
url http://jnas.nbuv.gov.ua/article/UJRN-0000349234
work_keys_str_mv AT vosinsky crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures
AT odyachenko crystallatticeengineeringthenovelsubstratesforiiinitrideoxideheterostructures