Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
Saved in:
| Date: | 2010 |
|---|---|
| Main Authors: | V. Osinsky, O. Dyachenko |
| Format: | Article |
| Language: | English |
| Published: |
2010
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349234 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
by: Osinsky, V., et al.
Published: (2010) -
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
by: P. V. Parphenyuk, et al.
Published: (2016) -
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
by: Parphenyuk, P.V., et al.
Published: (2016) -
The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
by: Menkovich, E.A., et al.
Published: (2014) -
Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
by: S. V. Dudin
Published: (2006)