Relaxation process features of photoconductivity in p-i-n structures
Saved in:
| Date: | 2010 |
|---|---|
| Main Authors: | R. A. Mumimov, Sh. K. Kanyazov, A. K. Saymbetov |
| Format: | Article |
| Language: | English |
| Published: |
2010
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000349316 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Relaxation process features of photoconductivity in p-i-n structures
by: Mumimov, R.A., et al.
Published: (2010) -
Photoconductivity relaxation and electron transport in macroporous silicon structures
by: L. A. Karachevtseva, et al.
Published: (2017) -
Relaxation of photoconductivity in macroporous silicon
by: V. F. Onyshchenko, et al.
Published: (2018) -
Peculiarities of surface photoconductivity relaxation in the structures of macroporous silicon in the visible spectrum
by: M. I. Karas, et al.
Published: (2020) -
Long-term relaxation of photoconductivity in cadmium doped Gd₂S₃ films
by: Jabua, Z.U., et al.
Published: (2011)