Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
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| Datum: | 2010 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2010
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| Schriftenreihe: | Physical surface engineering |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000877912 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-1017612024-04-17T18:06:56Z Model of the grain boundary in p-n-structures based on polycrystalline semiconductors L. O. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877912 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Physical surface engineering |
| spellingShingle |
Physical surface engineering L. O. Olimov Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| format |
Article |
| author |
L. O. Olimov |
| author_facet |
L. O. Olimov |
| author_sort |
L. O. Olimov |
| title |
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_short |
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_full |
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_fullStr |
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_full_unstemmed |
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_sort |
model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| publishDate |
2010 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000877912 |
| work_keys_str_mv |
AT loolimov modelofthegrainboundaryinpnstructuresbasedonpolycrystallinesemiconductors |
| first_indexed |
2025-07-22T15:43:59Z |
| last_indexed |
2025-07-22T15:43:59Z |
| _version_ |
1850422133147041792 |