Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic

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Дата:	2006
Автор:	S. I. Krukovskij
Формат:	Стаття
Мова:	English
Опубліковано:	2006
Назва видання:	Technology and design in electronic equipment
Онлайн доступ:	http://jnas.nbuv.gov.ua/article/UJRN-0000455221
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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spelling	open-sciencenbuvgovua-1049402024-04-17T18:56:09Z Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic S. I. Krukovskij 2225-5818 2006 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000455221 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Technology and design in electronic equipment
spellingShingle	Technology and design in electronic equipment S. I. Krukovskij Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
format	Article
author	S. I. Krukovskij
author_facet	S. I. Krukovskij
author_sort	S. I. Krukovskij
title	Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_short	Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_full	Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_fullStr	Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_full_unstemmed	Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_sort	complex-dopping epitaxial structures inp/ingaasp for optoelectronic
publishDate	2006
url	http://jnas.nbuv.gov.ua/article/UJRN-0000455221
work_keys_str_mv	AT sikrukovskij complexdoppingepitaxialstructuresinpingaaspforoptoelectronic
first_indexed	2025-07-22T16:42:17Z
last_indexed	2025-07-22T16:42:17Z
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