Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic

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Datum:2006
1. Verfasser: S. I. Krukovskij
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2006
Schriftenreihe:Technology and design in electronic equipment
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000455221
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author S. I. Krukovskij
author_facet S. I. Krukovskij
author_sort S. I. Krukovskij
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-1049402024-04-17T18:56:09Z Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic S. I. Krukovskij 2225-5818 2006 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000455221 Article
spellingShingle Technology and design in electronic equipment
S. I. Krukovskij
Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_full Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_fullStr Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_full_unstemmed Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_short Complex-dopping epitaxial structures InP/InGaAsP for optoelectronic
title_sort complex-dopping epitaxial structures inp/ingaasp for optoelectronic
url http://jnas.nbuv.gov.ua/article/UJRN-0000455221
work_keys_str_mv AT sikrukovskij complexdoppingepitaxialstructuresinpingaaspforoptoelectronic