The negatronic elements on the basis of local polycrystalline silicon films

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Datum:2002
Hauptverfasser: F. D. Kasimov, M. R. Ragimov
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2002
Schriftenreihe:Technology and design in electronic equipment
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000455306
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author F. D. Kasimov
M. R. Ragimov
author_facet F. D. Kasimov
M. R. Ragimov
author_sort F. D. Kasimov
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-1049652024-04-17T18:56:19Z The negatronic elements on the basis of local polycrystalline silicon films F. D. Kasimov M. R. Ragimov 2225-5818 2002 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000455306 Article
spellingShingle Technology and design in electronic equipment
F. D. Kasimov
M. R. Ragimov
The negatronic elements on the basis of local polycrystalline silicon films
title The negatronic elements on the basis of local polycrystalline silicon films
title_full The negatronic elements on the basis of local polycrystalline silicon films
title_fullStr The negatronic elements on the basis of local polycrystalline silicon films
title_full_unstemmed The negatronic elements on the basis of local polycrystalline silicon films
title_short The negatronic elements on the basis of local polycrystalline silicon films
title_sort negatronic elements on the basis of local polycrystalline silicon films
url http://jnas.nbuv.gov.ua/article/UJRN-0000455306
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