Mathematical model of inductor field effect on coefficient of impurity distribution in silicon

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Datum:2009
Hauptverfasser: S. G. Egorov, I. F. Chervonyj, R. N. Voljar
Format: Artikel
Sprache:English
Veröffentlicht: 2009
Schriftenreihe:Electrometallurgy Today
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000466672
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spelling open-sciencenbuvgovua-1051262024-04-17T18:57:48Z Mathematical model of inductor field effect on coefficient of impurity distribution in silicon S. G. Egorov I. F. Chervonyj R. N. Voljar 2415-8445 2009 en Electrometallurgy Today http://jnas.nbuv.gov.ua/article/UJRN-0000466672 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Electrometallurgy Today
spellingShingle Electrometallurgy Today
S. G. Egorov
I. F. Chervonyj
R. N. Voljar
Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
format Article
author S. G. Egorov
I. F. Chervonyj
R. N. Voljar
author_facet S. G. Egorov
I. F. Chervonyj
R. N. Voljar
author_sort S. G. Egorov
title Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
title_short Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
title_full Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
title_fullStr Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
title_full_unstemmed Mathematical model of inductor field effect on coefficient of impurity distribution in silicon
title_sort mathematical model of inductor field effect on coefficient of impurity distribution in silicon
publishDate 2009
url http://jnas.nbuv.gov.ua/article/UJRN-0000466672
work_keys_str_mv AT sgegorov mathematicalmodelofinductorfieldeffectoncoefficientofimpuritydistributioninsilicon
AT ifchervonyj mathematicalmodelofinductorfieldeffectoncoefficientofimpuritydistributioninsilicon
AT rnvoljar mathematicalmodelofinductorfieldeffectoncoefficientofimpuritydistributioninsilicon
first_indexed 2025-07-22T16:45:26Z
last_indexed 2025-07-22T16:45:26Z
_version_ 1850422527644401664