Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices

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Datum:2006
1. Verfasser: S. V. Dudin
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2006
Schriftenreihe:Physical surface engineering
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000855340
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author S. V. Dudin
author_facet S. V. Dudin
author_sort S. V. Dudin
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spelling open-sciencenbuvgovua-1068402024-04-17T19:10:02Z Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices S. V. Dudin 1999-8074 2006 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000855340 Article
spellingShingle Physical surface engineering
S. V. Dudin
Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title_full Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title_fullStr Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title_full_unstemmed Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title_short Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
title_sort plasma etching of gallium nitride based heterostructures in production of optoelectronic devices
url http://jnas.nbuv.gov.ua/article/UJRN-0000855340
work_keys_str_mv AT svdudin plasmaetchingofgalliumnitridebasedheterostructuresinproductionofoptoelectronicdevices