Cover Image

Plasma etching of gallium nitride based heterostructures in production of optoelectronic devices

Saved in:

Bibliographic Details
Date:	2006
Main Author:	S. V. Dudin
Format:	Article
Language:	English
Published:	2006
Series:	Physical surface engineering
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000855340
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Spectroscopic studies of RF discharge plasma at plasma-chemical etching of gallium nitride epitaxial structures
by: V. V. Hladkovskiy, et al.
Published: (2017)

Spectroscopic studies of RF discharge plasma at plasma-chemical etching of gallium nitride epitaxial structures
by: V. V. Hladkovskiy, et al.
Published: (2017)

Excitonic photoconductivity of heterostructures based on gallium and indium selenides
by: Katerynchuk, V.M., et al.
Published: (2017)

Automated system for real-time control of plasma-chemical etching process in ICP
by: S. V. Dudin
Published: (2006)

Research and development of technological systems based on high-frequency induction discharge for reactive ion-plasma etching of micro- and nanostructures
by: S. V. Dudin
Published: (2009)

Reflection coefficient and optical conductivity of gallium nitride GaN
by: J. O. Akinlami, et al.
Published: (2012)

Experimental research of ICP reactor for plasma-chemical etching
by: Dudin, S.V., et al.
Published: (2006)

Development of high-stable contact systems to gallium nitride microwave diodes
by: Belyaev, A.E., et al.
Published: (2007)

The investigation of luminescence properties of nitride-based heterostructures, containing superlattice
by: Menkovich, E.A., et al.
Published: (2014)

Optical approach to analysis of interaction of gallium nitride and weak magnetic fields
by: Red'ko, R.A.
Published: (2015)

The conditions of longitudinal and Hall conductance critical behavior in quantum Hall regime for heterostructures based on gallium and indium arsenide
by: A. S. Klepikova, et al.
Published: (2017)

Influence of intensive etching processes on structure and properties of carbon nitride films
by: Shalaev, R.V., et al.
Published: (2008)

Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)

Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor
by: F. Sizov
Published: (2015)

Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
by: Eladl, Sh.M., et al.
Published: (2009)

Investigation High Sensitive Photo Detector Device Based on the Avalanche Photodiode for Optoelectronic Measuring Systems
by: I. A. Braginets, et al.
Published: (2016)

Ion-plasma nitriding of inner cylindrical surfaces of products
by: I. V. Smyrnov, et al.
Published: (2022)

Vacuum—Plasma Coatings Based on the Multielement Nitrides
by: N. A. Azarenkov, et al.
Published: (2013)

Photoelectric converters based on porous gallium arsenide
by: A. I. Kirilash, et al.
Published: (2012)

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
by: V. M. Sorokin, et al.
Published: (2012)

Crystal lattice engineering the novel substrates for III-nitride-oxide heterostructures
by: V. Osinsky, et al.
Published: (2010)

Sensor of hydrostatic pressure based on gallium antimonide microcrystals
by: A. A. Druzhinin, et al.
Published: (2015)

Development of deep silicon plasma etching for 3D integration technology
by: A. A. Golishnikov, et al.
Published: (2014)

Influence of the concentration of components and the size of heaters on the thermal state of a high-pressure cell for studying the solubility of gallium nitride in iron
by: O. P. Liudvichenko, et al.
Published: (2023)

High temperature strain sensors based on gallium phosphide whiskers
by: A. O. Druzhynin, et al.
Published: (2019)

Development of a technology for the production of nano-sized heterostructured films by ion-plasma deposition
by: M. T. Normuradov, et al.
Published: (2023)

Use of high-thermal conductive aluminum nitride based ceramics in vacuum UHF electronic devices
by: V. I. Chasnyk
Published: (2013)

Influence of the plasma chemical etching on the silicon plates surface of photo electric converters
by: B. P. Polozov, et al.
Published: (2006)

Investigation of the surface anisotropy of polycrystalline gallium nitride coating using a tunnel microscope equipped with a tip of a boron-doped diamond
by: M. A. Tsysar
Published: (2016)

Three-barrier photodiodes based on gallium arsenide compounds for optical communication systems
by: D. M. Jodgorova, et al.
Published: (2009)

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching
by: I. R. Jatsunskij
Published: (2013)

Properties of original and irradiated phosphide-gallium LEDs
by: M. Y. Chumak, et al.
Published: (2024)

Optoelectronic colorimetric ammonia sensor
by: O. A. Vakhula, et al.
Published: (2010)

Thermodynamic calculations of the Fe–Ga–N systems&#039; melting diagram in the context of gallium nitrides&#039; crystallization at high temperatures and pressure conditions
by: V. Z. Turkevych, et al.
Published: (2022)

Doped nanoparticles for optoelectronics applications
by: Godlewski, M., et al.
Published: (2009)

Structure and short range order of liquid gallium
by: R. Bilyk, et al.
Published: (2017)

Improvement of Strength and Wear Resistance of Metal Products with Ion-Plasma Nitride Coatings by Pulse Technique Implementation
by: Khotsyanovskii, A.O., et al.
Published: (2014)

Improvement of Strength and Wear Resistance of Metal Products with Ion-Plasma Nitride Coatings by Pulse Technique Implementation
by: A. O. Khotsyanovskii, et al.
Published: (2014)

High-frequency discharges of low pressure in vacuum-plasma technology of low power-consuming for microstructure etching
by: V. I. Farenik
Published: (2004)

Photostimulated etching of germanium chalcogenide films
by: V. A. Danko, et al.
Published: (2012)