Special qualities of photo voltage effect in multy leveled semiconductors with p-n-p-structure with nonsimilar lightning
Saved in:
| Date: | 2008 |
|---|---|
| Main Author: | G. A. Nabiev |
| Format: | Article |
| Language: | English |
| Published: |
2008
|
| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000872893 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures
by: Sachenko, A.V., et al.
Published: (2007) -
Computer simulation of lightning overvoltage in high voltage overhead transmission line
by: A. D. Podoltsev
Published: (2017) -
The theory of APV effect with dember mechanisms in semiconductor films
by: G. A. Nabiev
Published: (2008) -
Statistical approach for insulation coordination of high voltage substation exposed to lightning strikes
by: Bedoui, S., et al.
Published: (2024) -
Research of photo-sensitive 2-barrier pAlGaInAs-nGaAs:O-Au-structure
by: U. M. Buzrukov
Published: (2005)