Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
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Дата: | 2023 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
2023
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Назва видання: | Technology and design in electronic equipment |
Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0001441047 |
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Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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open-sciencenbuvgovua-1099962024-09-16T15:14:44Z Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices O. S. Polukhin V. V. Kravchina 2225-5818 2023 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0001441047 Article |
institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
collection |
Open-Science |
language |
English |
series |
Technology and design in electronic equipment |
spellingShingle |
Technology and design in electronic equipment O. S. Polukhin V. V. Kravchina Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
format |
Article |
author |
O. S. Polukhin V. V. Kravchina |
author_facet |
O. S. Polukhin V. V. Kravchina |
author_sort |
O. S. Polukhin |
title |
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
title_short |
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
title_full |
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
title_fullStr |
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
title_full_unstemmed |
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices |
title_sort |
aspects of using of sheet thermomigration of the al+si three-dimensional liquid zone to form semiconductor power devices |
publishDate |
2023 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0001441047 |
work_keys_str_mv |
AT ospolukhin aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices AT vvkravchina aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices |
first_indexed |
2024-09-17T04:07:24Z |
last_indexed |
2024-09-17T04:07:24Z |
_version_ |
1810414745691357184 |