Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices

Saved in:
Bibliographic Details
Date:2023
Main Authors: O. S. Polukhin, V. V. Kravchina
Format: Article
Language:English
Published: 2023
Series:Technology and design in electronic equipment
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0001441047
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
_version_ 1859607979071897600
author O. S. Polukhin
V. V. Kravchina
author_facet O. S. Polukhin
V. V. Kravchina
author_sort O. S. Polukhin
collection Open-Science
first_indexed 2025-07-22T18:10:27Z
format Article
id open-sciencenbuvgovua-109996
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-22T18:10:27Z
publishDate 2023
record_format dspace
series Technology and design in electronic equipment
spelling open-sciencenbuvgovua-1099962024-09-16T15:14:44Z Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices O. S. Polukhin V. V. Kravchina 2225-5818 2023 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0001441047 Article
spellingShingle Technology and design in electronic equipment
O. S. Polukhin
V. V. Kravchina
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_full Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_fullStr Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_full_unstemmed Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_short Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_sort aspects of using of sheet thermomigration of the al+si three-dimensional liquid zone to form semiconductor power devices
url http://jnas.nbuv.gov.ua/article/UJRN-0001441047
work_keys_str_mv AT ospolukhin aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices
AT vvkravchina aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices