Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices

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Дата:2023
Автори: O. S. Polukhin, V. V. Kravchina
Формат: Стаття
Мова:English
Опубліковано: 2023
Назва видання:Technology and design in electronic equipment
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0001441047
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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-109996
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spelling open-sciencenbuvgovua-1099962024-09-16T15:14:44Z Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices O. S. Polukhin V. V. Kravchina 2225-5818 2023 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0001441047 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Technology and design in electronic equipment
spellingShingle Technology and design in electronic equipment
O. S. Polukhin
V. V. Kravchina
Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
format Article
author O. S. Polukhin
V. V. Kravchina
author_facet O. S. Polukhin
V. V. Kravchina
author_sort O. S. Polukhin
title Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_short Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_full Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_fullStr Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_full_unstemmed Aspects of using of sheet thermomigration of the Al+Si three-dimensional liquid zone to form semiconductor power devices
title_sort aspects of using of sheet thermomigration of the al+si three-dimensional liquid zone to form semiconductor power devices
publishDate 2023
url http://jnas.nbuv.gov.ua/article/UJRN-0001441047
work_keys_str_mv AT ospolukhin aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices
AT vvkravchina aspectsofusingofsheetthermomigrationofthealsithreedimensionalliquidzonetoformsemiconductorpowerdevices
first_indexed 2024-09-17T04:07:24Z
last_indexed 2024-09-17T04:07:24Z
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