Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures

Gespeichert in:
Bibliographische Detailangaben
Datum:2023
Hauptverfasser: V. P. Kostylyov, А. V. Sachenko, Т. V. Slusar, V. V. Chernenko
Format: Artikel
Sprache:English
Veröffentlicht: 2023
Schriftenreihe:Ukrainian journal of physics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0001449532
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-110181
record_format dspace
spelling open-sciencenbuvgovua-1101812024-09-16T15:16:41Z Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures V. P. Kostylyov А. V. Sachenko Т. V. Slusar V. V. Chernenko 2071-0186 2023 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0001449532 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian journal of physics
spellingShingle Ukrainian journal of physics
V. P. Kostylyov
А. V. Sachenko
Т. V. Slusar
V. V. Chernenko
Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
format Article
author V. P. Kostylyov
А. V. Sachenko
Т. V. Slusar
V. V. Chernenko
author_facet V. P. Kostylyov
А. V. Sachenko
Т. V. Slusar
V. V. Chernenko
author_sort V. P. Kostylyov
title Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
title_short Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
title_full Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
title_fullStr Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
title_full_unstemmed Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
title_sort reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
publishDate 2023
url http://jnas.nbuv.gov.ua/article/UJRN-0001449532
work_keys_str_mv AT vpkostylyov reductionofrecombinationlossesinnearsurfacediffusionemitterlayersofphotosensitivesiliconnppstructures
AT avsachenko reductionofrecombinationlossesinnearsurfacediffusionemitterlayersofphotosensitivesiliconnppstructures
AT tvslusar reductionofrecombinationlossesinnearsurfacediffusionemitterlayersofphotosensitivesiliconnppstructures
AT vvchernenko reductionofrecombinationlossesinnearsurfacediffusionemitterlayersofphotosensitivesiliconnppstructures
first_indexed 2025-07-22T18:14:37Z
last_indexed 2025-07-22T18:14:37Z
_version_ 1850423103649218560