Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons
Saved in:
| Date: | 2020 |
|---|---|
| Main Authors: | R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, Ya. M. Olikh, P. G. Litovchenko, Yu. V. Pavlovskyy, P. Potera, V. P. Tartachnyk |
| Format: | Article |
| Language: | English |
| Published: |
2020
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001151471 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Negative differential resistance and spectral characteristics of original and electron-irradiated (with E = 2 MeV) GaAs1-xPx LEDs
by: T. I. Mosiuk, et al.
Published: (2024) -
Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023) -
Influence of radiation on the electrophysical parameters of GaAsP LEDs
by: R. M. Vernydub, et al.
Published: (2021) -
Electrophysical characteristics of initial and irradiated GaAsP LEDs structures
by: O. V. Konoreva, et al.
Published: (2019) -
Spectral characteristics of initial and irradiated GaAsP LEDs
by: R. M. Vernydub, et al.
Published: (2021)