Vinoslavskij, M. N., Beljovskij, P. A., Poroshin, V. N., Vajnberg, V. V., & Bajdus, N. V. (2020). The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field.
Chicago-Zitierstil (17. Ausg.)Vinoslavskij, M. N., P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, und N. V. Bajdus. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.
MLA-Zitierstil (8. Ausg.)Vinoslavskij, M. N., et al. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.