Vinoslavskij, M. N., Beljovskij, P. A., Poroshin, V. N., Vajnberg, V. V., & Bajdus, N. V. (2020). The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field.
Chicago Style (17th ed.) CitationVinoslavskij, M. N., P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, and N. V. Bajdus. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.
MLA (8th ed.) CitationVinoslavskij, M. N., et al. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.