Vinoslavskij, M. N., Beljovskij, P. A., Poroshin, V. N., Vajnberg, V. V., & Bajdus, N. V. (2020). The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field.
Чикаго стиль цитування (17-те видання)Vinoslavskij, M. N., P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, та N. V. Bajdus. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.
Стиль цитування MLA (8-ме видання)Vinoslavskij, M. N., et al. The Effect of the Barrier Width Between Coupled Double Quantum Wells of GaAs/InGaAs/GaAs on the Bipolar Transport and THz Emission of the Hot Carriers in the Lateral Electric Field. 2020.