The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
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| Datum: | 2020 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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2020
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| Schriftenreihe: | Low Temperature Physics |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0001151503 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859498012465692672 |
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| author | M. N. Vinoslavskij P. A. Beljovskij V. N. Poroshin V. V. Vajnberg N. V. Bajdus |
| author_facet | M. N. Vinoslavskij P. A. Beljovskij V. N. Poroshin V. V. Vajnberg N. V. Bajdus |
| author_sort | M. N. Vinoslavskij |
| collection | Open-Science |
| first_indexed | 2025-07-17T12:22:29Z |
| format | Article |
| id | open-sciencenbuvgovua-12615 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T12:22:29Z |
| publishDate | 2020 |
| record_format | dspace |
| series | Low Temperature Physics |
| spelling | open-sciencenbuvgovua-126152024-02-25T17:57:46Z The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field M. N. Vinoslavskij P. A. Beljovskij V. N. Poroshin V. V. Vajnberg N. V. Bajdus 0132-6414 2020 en Low Temperature Physics http://jnas.nbuv.gov.ua/article/UJRN-0001151503 Article |
| spellingShingle | Low Temperature Physics M. N. Vinoslavskij P. A. Beljovskij V. N. Poroshin V. V. Vajnberg N. V. Bajdus The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title | The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title_full | The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title_fullStr | The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title_full_unstemmed | The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title_short | The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field |
| title_sort | effect of the barrier width between coupled double quantum wells of gaas/ingaas/gaas on the bipolar transport and thz emission of the hot carriers in the lateral electric field |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001151503 |
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