The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field

The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field

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Bibliographic Details
Date:2020
Main Authors: M. N. Vinoslavskij, P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, N. V. Bajdus
Format: Article
Language:English
Published: 2020
Series:Low Temperature Physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0001151503
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-126152024-02-25T17:57:46Z The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field M. N. Vinoslavskij P. A. Beljovskij V. N. Poroshin V. V. Vajnberg N. V. Bajdus 0132-6414 2020 en Low Temperature Physics http://jnas.nbuv.gov.ua/article/UJRN-0001151503 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Low Temperature Physics
spellingShingle Low Temperature Physics
M. N. Vinoslavskij
P. A. Beljovskij
V. N. Poroshin
V. V. Vajnberg
N. V. Bajdus
The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
format Article
author M. N. Vinoslavskij
P. A. Beljovskij
V. N. Poroshin
V. V. Vajnberg
N. V. Bajdus
author_facet M. N. Vinoslavskij
P. A. Beljovskij
V. N. Poroshin
V. V. Vajnberg
N. V. Bajdus
author_sort M. N. Vinoslavskij
title The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
title_short The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
title_full The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
title_fullStr The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
title_full_unstemmed The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
title_sort effect of the barrier width between coupled double quantum wells of gaas/ingaas/gaas on the bipolar transport and thz emission of the hot carriers in the lateral electric field
publishDate 2020
url http://jnas.nbuv.gov.ua/article/UJRN-0001151503
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first_indexed 2025-07-17T12:22:29Z
last_indexed 2025-07-17T12:22:29Z
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