Spectral photosensitivity of diffused Ge-p–i–n photodiods
Saved in:
| Date: | 2020 |
|---|---|
| Main Author: | A. V. Fedorenko |
| Format: | Article |
| Language: | English |
| Published: |
2020
|
| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001194849 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
by: V. P. Maslov, et al.
Published: (2018) -
Spectral photosensitivity of the m-n⁰-n structure on the basis of epitaxial layers
by: Yodgorova, D.M., et al.
Published: (2008) -
Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
by: V. P. Kostylyov, et al.
Published: (2023) -
Mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film
by: I. B. Sapaev, et al.
Published: (2015) -
Silicon p-i-n photodiode with increased pulse sensitivity
by: M. S. Kukurudziak, et al.
Published: (2021)