Kukurudziak, M. S., Andreeva, O. P., & Lipka, V. M. (2020). High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm.
Chicago-Zitierstil (17. Ausg.)Kukurudziak, M. S., O. P. Andreeva, und V. M. Lipka. High-resistivity P-type Silicon-based P-i-n Photodiode with High Responsivity at the Wavelength of 1060 Nm. 2020.
MLA-Zitierstil (8. Ausg.)Kukurudziak, M. S., et al. High-resistivity P-type Silicon-based P-i-n Photodiode with High Responsivity at the Wavelength of 1060 Nm. 2020.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.