High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
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| Datum: | 2020 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2020
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| Schriftenreihe: | Technology and design in electronic equipment |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0001194859 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859501721177292800 |
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| author | M. S. Kukurudziak O. P. Andreeva V. M. Lipka |
| author_facet | M. S. Kukurudziak O. P. Andreeva V. M. Lipka |
| author_sort | M. S. Kukurudziak |
| collection | Open-Science |
| first_indexed | 2025-07-17T12:41:55Z |
| format | Article |
| id | open-sciencenbuvgovua-14759 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T12:41:55Z |
| publishDate | 2020 |
| record_format | dspace |
| series | Technology and design in electronic equipment |
| spelling | open-sciencenbuvgovua-147592024-02-25T18:03:16Z High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm M. S. Kukurudziak O. P. Andreeva V. M. Lipka 2225-5818 2020 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0001194859 Article |
| spellingShingle | Technology and design in electronic equipment M. S. Kukurudziak O. P. Andreeva V. M. Lipka High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title | High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title_full | High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title_fullStr | High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title_full_unstemmed | High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title_short | High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| title_sort | high-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0001194859 |
| work_keys_str_mv | AT mskukurudziak highresistivityptypesiliconbasedpinphotodiodewithhighresponsivityatthewavelengthof1060nm AT opandreeva highresistivityptypesiliconbasedpinphotodiodewithhighresponsivityatthewavelengthof1060nm AT vmlipka highresistivityptypesiliconbasedpinphotodiodewithhighresponsivityatthewavelengthof1060nm |