High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
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| Date: | 2020 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001194859 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |