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High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

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Bibliographic Details
Date:	2020
Main Authors:	M. S. Kukurudziak, O. P. Andreeva, V. M. Lipka
Format:	Article
Language:	English
Published:	2020
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001194859
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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