On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉
Gespeichert in:
| Datum: | 2019 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2019
|
| Schriftenreihe: | Reports of the National Academy of Sciences of Ukraine |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000996210 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859504804031627264 |
|---|---|
| author | H. P. Haidar |
| author_facet | H. P. Haidar |
| author_sort | H. P. Haidar |
| collection | Open-Science |
| first_indexed | 2025-07-17T13:19:21Z |
| format | Article |
| id | open-sciencenbuvgovua-18213 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T13:19:21Z |
| publishDate | 2019 |
| record_format | dspace |
| series | Reports of the National Academy of Sciences of Ukraine |
| spelling | open-sciencenbuvgovua-182132024-02-26T21:59:55Z On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 H. P. Haidar 1025-6415 2019 en Reports of the National Academy of Sciences of Ukraine http://jnas.nbuv.gov.ua/article/UJRN-0000996210 Article |
| spellingShingle | Reports of the National Academy of Sciences of Ukraine H. P. Haidar On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title | On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title_full | On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title_fullStr | On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title_full_unstemmed | On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title_short | On the methodology of tensoresistance determination for n-Ge and n-Si in the crystallographic directions 〈110〉 |
| title_sort | on the methodology of tensoresistance determination for n-ge and n-si in the crystallographic directions 〈110〉 |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000996210 |
| work_keys_str_mv | AT hphaidar onthemethodologyoftensoresistancedeterminationforngeandnsiinthecrystallographicdirections110 |